IQE013N04LM6CGATMA1

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Part Number: IQE013N04LM6CGATMA1

Manufacturer: Infineon Technologies

Categories: MOSFET

RoHS

Datasheet: IQE013N04LM6CGATMA1

Description: MOSFET TRENCH <= 40V

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Specifications

Manufacturer: Infineon Technologies

Categories: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 205 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Package / Case: TTFN-9-1

Packaging: Cut Tape, MouseReel, Reel

Pd - Power Dissipation: 107 W

Qg - Gate Charge: 20 nC

Rds On - Drain-Source Resistance: 1.35 mOhms

Technology: SI

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 40 V

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage: 1.2 V

Porduct Category

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Latest Reviews

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Emanuela Fe

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Brenda Gfeller

Thank You all fine, packed very well

Ulrich Bundke

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Sergio Garcia Carreon

Goods came in two weeks. Well packed. Track number tracked

kwon yong sik

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