- Part Number
- IQE006NE2LM5ATMA1
- Manufacturer
- Infineon Technologies
- Categories
- MOSFET
- RoHS
- Datasheet
- Description
- MOSFET TRENCH <= 40V
IQE006NE2LM5ATMA1
Images are for reference only
Specifications
- Manufacturer
- Infineon Technologies
- Categories
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 298 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- TSON-8-4
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 89 W
- Qg - Gate Charge
- 28.5 nC
- Rds On - Drain-Source Resistance
- 650 uOhms
- Technology
- SI
- Tradename
- OptiMOS
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 25 V
- Vgs - Gate-Source Voltage
- - 16 V, + 16 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
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Latest Reviews
Takes 8 days to Japan. Good!
Alex Fragkos
fast delivery
Mike Ibarra
Fast shippng. Good quality. I recomend this seller.
Raymond de Vries
The goods are OK, thank you dealers.
CHARLES SANTOS
Works. Recommend
Rajiv
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