IQE006NE2LM5CGATMA1

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Part Number: IQE006NE2LM5CGATMA1

Manufacturer: Infineon Technologies

Categories: MOSFET

RoHS

Datasheet: IQE006NE2LM5CGATMA1

Description: MOSFET TRENCH <= 40V

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Specifications

Manufacturer: Infineon Technologies

Categories: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 298 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Package / Case: TTFN-9-1

Packaging: Cut Tape, Reel

Pd - Power Dissipation: 89 W

Qg - Gate Charge: 28.5 nC

Rds On - Drain-Source Resistance: 650 uOhms

Technology: SI

Tradename: OptiMOS

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 25 V

Vgs - Gate-Source Voltage: - 16 V, + 16 V

Vgs th - Gate-Source Threshold Voltage: 2 V

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Latest Reviews

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My package arrived wet, not know where occurs this fact, but working all right

Eddy Hustinx

it is safe and sound all, thank you seller!

Arturo Madril

Thank you for the help in the selection of the correct driver, connect, works, not heated perfectly!

สิทธิศักดิ์ วันดี

Good material. Great seller, efficient and insurance. Ok

Janos More

Shipping bіlshe mіsyatsya. Chi pratsyuyut not perevіryav.

Babatunde Alli

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