- Part Number
- R8009KNXC7G
- Manufacturer
- ROHM Semiconductor
- Categories
- MOSFET
- RoHS
- Datasheet
- Description
- MOSFET
R8009KNXC7G
Images are for reference only
Specifications
- Manufacturer
- ROHM Semiconductor
- Categories
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 9 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-220FM-3
- Packaging
- Bulk
- Pd - Power Dissipation
- 59 W
- Qg - Gate Charge
- 27 nC
- Rds On - Drain-Source Resistance
- 600 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Vgs - Gate-Source Voltage
- 20 V, 30 V
- Vgs th - Gate-Source Threshold Voltage
- 4.5 V
Porduct Category
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23,394 Products
Latest Reviews
Teşekkürler
Ashir Hussain
Very good and reliable device, thank you, keep it rolling! Highly recommend to buy!
Pat Davis
Properly packed, not damaged. Works well, voltage levels are stable. Recommend.
Paolo Giazzi
Quickly came to CET, all in one package. Look at the rules
Earl Sault
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
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R8009KNXC7G News
03/14/2023
03/13/2023
03/09/2023
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