Part Number R8002ANX Manufacturer ROHM Semiconductor Categories MOSFET RoHS Datasheet R8002ANX Description MOSFET 10V Drive Nch MOSFET
Manufacturer ROHM Semiconductor Categories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 2 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FP-3 Packaging Bulk Pd - Power Dissipation 35 W Qg - Gate Charge 12.7 nC Rds On - Drain-Source Resistance 4.3 Ohms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage 5 V