- Part Number
- R8003KNXC7G
- Manufacturer
- ROHM Semiconductor
- Categories
- MOSFET
- RoHS
- Datasheet
- Description
- MOSFET
R8003KNXC7G
Images are for reference only
Specifications
- Manufacturer
- ROHM Semiconductor
- Categories
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 3 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-220FM-3
- Packaging
- Tube
- Pd - Power Dissipation
- 36 W
- Qg - Gate Charge
- 11.5 nC
- Rds On - Drain-Source Resistance
- 1.8 Ohms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 800 V
- Vgs - Gate-Source Voltage
- 20 V, 30 V
- Vgs th - Gate-Source Threshold Voltage
- 4.5 V
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Latest Reviews
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
High Quality driver, works excellent. It came to Moscow for 7 days.
Mark Abraham S. Goduco
fast delivery
Mike Ibarra
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
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R8003KNXC7G News
03/14/2023
03/13/2023
03/09/2023
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