Part Number R8006KNXC7G Manufacturer ROHM Semiconductor Categories MOSFET RoHS Datasheet R8006KNXC7G Description MOSFET
Manufacturer ROHM Semiconductor Categories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 6 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-220FM-3 Packaging Tube Pd - Power Dissipation 52 W Qg - Gate Charge 22 nC Rds On - Drain-Source Resistance 900 mOhms Technology SI Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 800 V Vgs - Gate-Source Voltage 20 V, 30 V Vgs th - Gate-Source Threshold Voltage 4.5 V