- Part Number
- TK100E08N1,S1X
- Manufacturer
- Toshiba
- Categories
- MOSFET
- RoHS
- Datasheet
- Description
- MOSFET 80V N-Ch PWR FET 9000pF 130nC 214A
TK100E08N1,S1X
Images are for reference only
Specifications
- Manufacturer
- Toshiba
- Categories
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 214 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-220-3
- Packaging
- Tube
- Pd - Power Dissipation
- 255 W
- Qg - Gate Charge
- 130 nC
- Rds On - Drain-Source Resistance
- 3.2 mOhms
- Technology
- SI
- Tradename
- U-MOSVIII-H
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 80 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
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Latest Reviews
Yes, they are all here. :)
sudheer kumar sirra
packed pretty good, all is ok,-seller.
Julianah Yungkim
Perfectly.
Sensofar Tech, SL
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
the photo in comparison with cheap. Delivery fast
Kaido Kevvai
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