- Part Number
- TK100A08N1,S4X
- Manufacturer
- Toshiba
- Categories
- MOSFET
- RoHS
- Datasheet
- Description
- MOSFET MOSFET NCh 2.6ohm VGS10V10uAVDS80V
TK100A08N1,S4X
Images are for reference only
Specifications
- Manufacturer
- Toshiba
- Categories
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 100 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-220-3
- Packaging
- Tube
- Pd - Power Dissipation
- 45 W
- Qg - Gate Charge
- 130 nC
- Rds On - Drain-Source Resistance
- 2.6 mOhms
- Technology
- SI
- Tradename
- U-MOSVIII-H
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 80 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4 V
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Latest Reviews
Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!
Eitan Hammami
Everything is excellent! recommend this seller!
Stoyan Chaykov
The goods are OK, thank you dealers.
CHARLES SANTOS
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
Long Service and Russia!
Alex Yu
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