- Part Number
- TK100E10N1,S1X
- Manufacturer
- Toshiba
- Categories
- MOSFET
- RoHS
- Datasheet
- Description
- MOSFET 100V N-Ch PWR FET 8800pF 140nC 207A
TK100E10N1,S1X
Images are for reference only
Specifications
- Manufacturer
- Toshiba
- Categories
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 207 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-220-3
- Packaging
- Tube
- Pd - Power Dissipation
- 255 W
- Qg - Gate Charge
- 140 nC
- Rds On - Drain-Source Resistance
- 3.4 mOhms
- Technology
- SI
- Tradename
- U-MOSVIII-H
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
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Latest Reviews
My package arrived wet, not know where occurs this fact, but working all right
Eddy Hustinx
Quickly came to CET, all in one package. Look at the rules
Earl Sault
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Takes 8 days to Japan. Good!
Alex Fragkos
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
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