- Part Number
- G3R20MT12K
- Manufacturer
- GeneSiC Semiconductor
- Categories
- MOSFET
- RoHS
- Datasheet
- Description
- MOSFET 1200V 20mO TO-247-4 G3R SiC MOSFET
G3R20MT12K
Images are for reference only
Specifications
- Manufacturer
- GeneSiC Semiconductor
- Categories
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 100 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- Through Hole
- Number of Channels
- 1 Channel
- Package / Case
- TO-247-4
- Packaging
- Tube
- Pd - Power Dissipation
- 389 W
- Qg - Gate Charge
- 180 nC
- Rds On - Drain-Source Resistance
- 20 mOhms
- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Vgs - Gate-Source Voltage
- - 5 V, + 15 V
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
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Latest Reviews
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G3R20MT12K News
03/14/2023
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