- Part Number
- G3R20MT12N
- Manufacturer
- GeneSiC Semiconductor
- Categories
- MOSFET
- RoHS
- Datasheet
- Description
- MOSFET 1200V 20mO SOT-227 G3R SiC MOSFET
G3R20MT12N
Images are for reference only
Specifications
- Manufacturer
- GeneSiC Semiconductor
- Categories
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 93 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- SOT-227
- Packaging
- Tube
- Pd - Power Dissipation
- 338 W
- Qg - Gate Charge
- 180 nC
- Rds On - Drain-Source Resistance
- 20 mOhms
- Technology
- SiC
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 1.2 kV
- Vgs - Gate-Source Voltage
- - 5 V, + 15 V
- Vgs th - Gate-Source Threshold Voltage
- 2.7 V
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Latest Reviews
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
it is safe and sound all, thank you seller!
Arturo Madril
Perfectly.
Sensofar Tech, SL
Goods came in two weeks. Well packed. Track number tracked
kwon yong sik
Good product. Very small and well built. Ii is not produce any kind of. nterferences RFi. Quick delivery
Andrzej Piwowarczyk
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G3R20MT12N News
03/14/2023
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