R8010ANX

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Part Number
R8010ANX
Manufacturer
ROHM Semiconductor
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 10V Drive Nch MOSFET

Specifications

Manufacturer
ROHM Semiconductor
Categories
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
10 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-220FP-3
Packaging
Cut Tape, Reel
Pd - Power Dissipation
40 W
Qg - Gate Charge
62 nC
Rds On - Drain-Source Resistance
560 mOhms
Technology
SI
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
800 V
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage
3 V

Latest Reviews

goods very well received very good quality

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

Decent quality, not минвелл certainly, but enough decent

Long Service and Russia!

Great product. Arrived ahead of time. Thank you

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