TP65H015G5WS

Images are for reference only
Part Number
TP65H015G5WS
Manufacturer
Transphorm
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET GAN FET 650V 95A TO2 47

Specifications

Manufacturer
Transphorm
Categories
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
95 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Number of Channels
1 Channel
Package / Case
TO-247-3
Packaging
Bulk
Pd - Power Dissipation
276 W
Qg - Gate Charge
68 nC
Rds On - Drain-Source Resistance
18 mOhms
Technology
GaN
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4 V

Latest Reviews

Teşekkürler

Everything is excellent! recommend this seller!

Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together

Fast shippng. Good quality. I recomend this seller.

the photo in comparison with cheap. Delivery fast

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