IMW120R060M1HXKSA1

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Part Number: IMW120R060M1HXKSA1

Manufacturer: Infineon Technologies

Categories: MOSFET

RoHS

Datasheet: IMW120R060M1HXKSA1

Description: MOSFET SIC DISCRETE

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Specifications

Manufacturer: Infineon Technologies

Categories: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 36 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: Through Hole

Number of Channels: 1 Channel

Package / Case: TO-247-3

Packaging: Tube

Pd - Power Dissipation: 150 W

Qg - Gate Charge: 31 nC

Rds On - Drain-Source Resistance: 78 mOhms

Technology: SiC

Tradename: CoolSiC

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 1.2 kV

Vgs - Gate-Source Voltage: - 7 V, + 23 V

Vgs th - Gate-Source Threshold Voltage: 5.7 V

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Klimenko Yuriy Mihaylovich

everything as it is written in the description of the same deductible prodovtsu deserved

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Ashir Hussain

Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.

Kai Hallaren

Order received all the rules. Ощень мана quickly, to Yakutia 5 day, respect, not tupit. Packed in standard. Driver in the form of niche, soldering standards, not tested. And diode, he ordered. Orders joined fellow

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