- Part Number
- XK1R9F10QB,LXGQ
- Manufacturer
- Toshiba
- Categories
- MOSFET
- RoHS
- Datasheet
- Description
- MOSFET 375W 1MHz Automotive; AEC-Q101
XK1R9F10QB,LXGQ
Images are for reference only
Specifications
- Manufacturer
- Toshiba
- Categories
- MOSFET
- Channel Mode
- Enhancement
- Id - Continuous Drain Current
- 160 A
- Maximum Operating Temperature
- + 175 C
- Minimum Operating Temperature
- -
- Mounting Style
- SMD/SMT
- Number of Channels
- 1 Channel
- Package / Case
- TO-220SM-3
- Packaging
- Cut Tape, Reel
- Pd - Power Dissipation
- 375 W
- Qg - Gate Charge
- 184 nC
- Qualification
- AEC-Q101
- Rds On - Drain-Source Resistance
- 1.92 mOhms
- Technology
- SI
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 3.5 V
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Latest Reviews
Quick delivery. Secure packing. Excellent product. Thank you
BHADRESH PATEL
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
Great product. Arrived ahead of time. Thank you
Alexey Petrov
I received the product right, thank you very much 2018/12/03 ★★★★★
Haur Su
Packed medium, in transit could поврелиться. But since it's safe, work perfectly
Matt Hookway
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