RQ3E070BNTB

Images are for reference only
Part Number
RQ3E070BNTB
Manufacturer
ROHM Semiconductor
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET 4.5V Drive Nch MOSFET

Specifications

Manufacturer
ROHM Semiconductor
Categories
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
7 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
HSMT-8
Packaging
Cut Tape, MouseReel, Reel
Pd - Power Dissipation
2 W
Qg - Gate Charge
8.9 nC
Rds On - Drain-Source Resistance
20 mOhms
Technology
SI
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
1 V

Latest Reviews

Hello! Order received, very happy. Thank you very much!

The goods are OK, thank you dealers.

Long Service and Russia!

Everything is fine!

Seems well have not tested

You May Also Like

People viewing RQ3E070BNTB then bought

Related keywords for RQ3E

  • RQ3E070BNTB Integrated
  • RQ3E070BNTB RoHS
  • RQ3E070BNTB PDF Datasheet
  • RQ3E070BNTB Datasheet
  • RQ3E070BNTB Part
  • RQ3E070BNTB Buy
  • RQ3E070BNTB Distributor
  • RQ3E070BNTB PDF
  • RQ3E070BNTB Component
  • RQ3E070BNTB ICs
  • RQ3E070BNTB Download PDF
  • RQ3E070BNTB Download datasheet
  • RQ3E070BNTB Supply
  • RQ3E070BNTB Supplier
  • RQ3E070BNTB Price
  • RQ3E070BNTB Data sheet
  • RQ3E070BNTB Image
  • RQ3E070BNTB Picture
  • RQ3E070BNTB Inventory
  • RQ3E070BNTB Stock
  • RQ3E070BNTB Original
  • RQ3E070BNTB Cheapest
  • RQ3E070BNTB Excellent
  • RQ3E070BNTB Lead free
  • RQ3E070BNTB Specification
  • RQ3E070BNTB Hot offers
  • RQ3E070BNTB Break Price
  • RQ3E070BNTB Technical Data