Part Number G3R350MT12J Manufacturer GeneSiC Semiconductor Categories MOSFET RoHS Datasheet G3R350MT12J Description MOSFET 1200V 350mO TO-263-7 G3R SiC MOSFET
Manufacturer GeneSiC Semiconductor Categories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 10 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263-7 Packaging Tube Pd - Power Dissipation 64 W Qg - Gate Charge 10 nC Rds On - Drain-Source Resistance 350 mOhms Technology SiC Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 1.2 kV Vgs - Gate-Source Voltage - 5 V, + 15 V Vgs th - Gate-Source Threshold Voltage 2.7 V