- Part Number
- 2N2102 TIN/LEAD
- Manufacturer
- Central Semiconductor
- Categories
- Bipolar Transistors - BJT
- RoHS
- Datasheet
- Description
- Bipolar Transistors - BJT 120Vcbo 80Vcer 65Vceo 7.0Vebo 1.0W
2N2102 TIN/LEAD
Images are for reference only
Specifications
- Manufacturer
- Central Semiconductor
- Categories
- Bipolar Transistors - BJT
- Collector- Base Voltage VCBO
- 120 V
- Collector- Emitter Voltage VCEO Max
- 65 V
- Collector-Emitter Saturation Voltage
- 0.5 V
- Configuration
- Single
- Emitter- Base Voltage VEBO
- 7 V
- Gain Bandwidth Product fT
- 60 MHz
- Maximum DC Collector Current
- -
- Maximum Operating Temperature
- + 200 C
- Minimum Operating Temperature
- - 65 C
- Mounting Style
- Through Hole
- Package / Case
- TO-39-3
- Packaging
- Bulk
- Pd - Power Dissipation
- 1 W
- Series
- 2N2102
- Transistor Polarity
- NPN
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Latest Reviews
Product well received and very quickly for France, all is in order in perfect condition. Thank you. I recommend this company.
Dane Gogic
Perfectly.
Sensofar Tech, SL
fast delivery
Mike Ibarra
Shipping a little 1 weeks, normal packing, the procedure is complete.
dennis kraft
The goods are OK, thank you dealers.
CHARLES SANTOS
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