1N6474USe3

Images are for reference only

Specifications

Manufacturer
Microchip Technology
Categories
ESD Suppressors / TVS Diodes
Breakdown Voltage
33 V
Clamping Voltage
47.5 V
Ipp - Peak Pulse Current
181 A
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Number of Channels
1 Channel
Packaging
Bulk
Polarity
Unidirectional
Pppm - Peak Pulse Power Dissipation
1.5 kW
Product Type
TVS Diodes
Termination Style
SMD/SMT
Working Voltage
30.5 V

Latest Reviews

Received, Fast shipping, not checked yet

Thank you! Received consistent. Long Service. Walking in Russia! Seller recommend!!!

packed pretty good, all is ok,-seller.

Perfectly.

I received the product right, thank you very much 2018/12/03 ★★★★★

You May Also Like

1N645-1
Microchip Technology
1n645-1/tr
Microchip Technology
1N645-1e3
Microchip Technology
1N645-1e3/TR
Microchip Technology

People viewing 1N6474USe3 then bought

1N645-1
Microchip Technology
1n645-1/tr
Microchip Technology
1N645-1e3
Microchip Technology
1N645-1e3/TR
Microchip Technology

Related keywords for 1N64

  • 1N6474USe3 Integrated
  • 1N6474USe3 RoHS
  • 1N6474USe3 PDF Datasheet
  • 1N6474USe3 Datasheet
  • 1N6474USe3 Part
  • 1N6474USe3 Buy
  • 1N6474USe3 Distributor
  • 1N6474USe3 PDF
  • 1N6474USe3 Component
  • 1N6474USe3 ICs
  • 1N6474USe3 Download PDF
  • 1N6474USe3 Download datasheet
  • 1N6474USe3 Supply
  • 1N6474USe3 Supplier
  • 1N6474USe3 Price
  • 1N6474USe3 Data sheet
  • 1N6474USe3 Image
  • 1N6474USe3 Picture
  • 1N6474USe3 Inventory
  • 1N6474USe3 Stock
  • 1N6474USe3 Original
  • 1N6474USe3 Cheapest
  • 1N6474USe3 Excellent
  • 1N6474USe3 Lead free
  • 1N6474USe3 Specification
  • 1N6474USe3 Hot offers
  • 1N6474USe3 Break Price
  • 1N6474USe3 Technical Data