- Part Number
- MTD8600N-T
- Manufacturer
- Marktech Optoelectronics
- Categories
- Phototransistors
- RoHS
- Datasheet
- Description
- Phototransistors Photo Diode 880nm
MTD8600N-T
Images are for reference only
Specifications
- Manufacturer
- Marktech Optoelectronics
- Categories
- Phototransistors
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector-Emitter Breakdown Voltage
- 30 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Dark Current
- 100 nA
- Fall Time
- 10 us
- Maximum On-State Collector Current
- 50 mA
- Maximum Operating Temperature
- + 100 C
- Minimum Operating Temperature
- - 30 C
- Mounting Style
- Through Hole
- Package / Case
- TO-18-2
- Pd - Power Dissipation
- 250 mW
- Peak Wavelength
- 880 nm
- Product
- Phototransistors
- Rise Time
- 10 us
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Latest Reviews
Teşekkürler
Ashir Hussain
Hello! Order received, very happy. Thank you very much!
Flavia
Works. Find the price of this product is very good
Maxim Krasnov
Decent quality, not минвелл certainly, but enough decent
TEIXEIRA
the photo in comparison with cheap. Delivery fast
Kaido Kevvai
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MTD8600N-T News
03/14/2023
03/13/2023
03/09/2023
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