CISSOID introduces new gate driver board

CISSOID, a leader in high-temperature semiconductor solutions for all industries, presented the latest high-temperature gate drivers, silicon carbide (SiC) Mosfet devices and igbt power modules at the 2019 European Power Electronics and Intelligent Drive Products Show (PCIM 2019). . PCIM 2019 is the world's leading exhibition and conference on power electronics, smart drives, renewable energy and energy management.

CISSOID has introduced a new gate driver board optimized for 62mm silicon carbide MOSFET power modules rated at 125°C (ambient temperature). The board is based on CISSOID's HADES gate driver chipset and can also drive IGBT power modules while providing space for high-density power converters in automotive and industrial applications. It supports high frequency ("100KHz") and fast silicon carbide MOSFET switches (dV/dt) 50KV/μs), which can increase the efficiency of the power converter and reduce its size and weight. Designed for harsh voltage environments, the board supports 1200V and 1700V power modules with isolation voltages up to 3600V (50Hz, 1 minute withstand voltage test) and a creepage distance of 14mm. Protection features such as undervoltage lockout (UVLO), active Miller clamp (AMC) and desaturation detection ensure safe driving in the event of a fault and provide reliable protection for power modules. "This new silicon carbide gate driver board is the result of years of collaboration with industry leaders in the automotive, transportation and aerospace markets. It combines CISSOID's expertise in silicon carbide devices and designs for harsh environments. And long-term experience in electronic systems," said Etienne Vanzieleghem, vice president of engineering at CISSOID.

In Nuremberg, CISSOID also showcased the latest silicon carbide MOSFET devices and IGBT power modules. A new discrete 1200V/40mOhms silicon carbide MOSFET transistor is available in a TO-247 package that operates over the -55°C to 175°C temperature range. The MOSFET has a drain-to-source on-resistance of 40mOhms at 25°C (junction temperature) and an on-resistance of 75mOhms at 175°C (junction temperature). Very low switching turn-on and turn-off energies (1mJ and 0.4mJ, respectively) make the device ideal for efficient and compact DC-DC converters, power inverters and battery chargers. CISSOID also demonstrated two 62mm 1200V IGBT power modules rated at 200A and 300A respectively.

CISSOID is also working on the development of silicon carbide MOSFET power modules and will be available in the coming months. "These new products demonstrate CISSOID's commitment to providing comprehensive silicon carbide-based solutions, including transistors, modules and gate drivers, to support the industry's use of efficient, lightweight, and compact power conversion products in new electric vehicles and renewable energy applications. ," said Dave Hutton, CEO of CISSOID. “We are working closely with OEMs and auto parts suppliers to customize the gate drivers for new silicon carbide power inverters in new energy vehicles,” he added.