- Part Number
- TP65H070LDG-TR
- Manufacturer
- Transphorm
- Categories
- RF JFET Transistors
- RoHS
- Datasheet
- Description
- RF JFET Transistors 227-TP65H070LSG-TR
TP65H070LDG-TR
Images are for reference only
Specifications
- Manufacturer
- Transphorm
- Categories
- RF JFET Transistors
- Id - Continuous Drain Current
- 25 A
- Maximum Operating Temperature
- + 150 C
- Minimum Operating Temperature
- - 55 C
- Mounting Style
- SMD/SMT
- Package / Case
- PQFN-8
- Packaging
- Reel
- Pd - Power Dissipation
- 96 W
- Technology
- GaN
- Transistor Polarity
- N-Channel
- Transistor Type
- HEMT
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Vgs - Gate-Source Breakdown Voltage
- - 20 V, + 20 V
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Latest Reviews
Everything as it is written in the description of the same deductible prodovtsu deserved 5
Boris Arshinov
Article fits the description on the website and it is good quality. Free in 5 days in France well protected in a bubble envelope. Each value is row in a small bag zip. Trés satisfied with my purchase, I recommend this article and this supplier.
Kai Hallaren
Takes 8 days to Japan. Good!
Alex Fragkos
Perfectly.
Sensofar Tech, SL
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
TP65H070LDG-TR News
03/14/2023
03/13/2023
03/09/2023
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