CDM22010-650 TIN/LEAD

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Part Number: CDM22010-650 TIN/LEAD

Manufacturer: Central Semiconductor

Categories: MOSFET

RoHS

Datasheet: CDM22010-650 TIN/LEAD

Description: MOSFET 650Vds 30Vgs 10A 40A 8.0nC 0.88Ohm

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Specifications

Manufacturer: Central Semiconductor

Categories: MOSFET

Channel Mode: Enhancement

Id - Continuous Drain Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Mounting Style: Through Hole

Number of Channels: 1 Channel

Package / Case: TO-220-3

Packaging: Bulk

Pd - Power Dissipation: 2 W

Qg - Gate Charge: 20 nC

Rds On - Drain-Source Resistance: 1 Ohms

Technology: SI

Transistor Polarity: N-Channel

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage: 4 V

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My package arrived wet, not know where occurs this fact, but working all right

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Hello! Order received, very happy. Thank you very much!

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