Part Number TP65H050G4BS Manufacturer Transphorm Categories MOSFET RoHS Datasheet TP65H050G4BS Description MOSFET GAN FET 650V 34A TO263
Manufacturer Transphorm Categories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 34 A Maximum Operating Temperature + 150 C Minimum Operating Temperature - 55 C Mounting Style SMD/SMT Number of Channels 1 Channel Package / Case TO-263-3 Packaging Bulk Pd - Power Dissipation 119 W Qg - Gate Charge 16 nC Rds On - Drain-Source Resistance 60 mOhms Technology SI Transistor Polarity P-Channel Vds - Drain-Source Breakdown Voltage 650 V Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 4.8 V