TP65H050G4BS

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Part Number
TP65H050G4BS
Manufacturer
Transphorm
Categories
MOSFET
RoHS
Datasheet
Description
MOSFET GAN FET 650V 34A TO263

Specifications

Manufacturer
Transphorm
Categories
MOSFET
Channel Mode
Enhancement
Id - Continuous Drain Current
34 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Number of Channels
1 Channel
Package / Case
TO-263-3
Packaging
Bulk
Pd - Power Dissipation
119 W
Qg - Gate Charge
16 nC
Rds On - Drain-Source Resistance
60 mOhms
Technology
SI
Transistor Polarity
P-Channel
Vds - Drain-Source Breakdown Voltage
650 V
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
4.8 V

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