Part Number G3R45MT17D Manufacturer GeneSiC Semiconductor Categories MOSFET RoHS Datasheet G3R45MT17D Description MOSFET 1700V 45mO TO-247-3 G3R SiC MOSFET
Manufacturer GeneSiC Semiconductor Categories MOSFET Channel Mode Enhancement Id - Continuous Drain Current 52 A Maximum Operating Temperature + 175 C Minimum Operating Temperature - 55 C Mounting Style Through Hole Number of Channels 1 Channel Package / Case TO-247-3 Packaging Tube Pd - Power Dissipation 364 W Qg - Gate Charge 106 nC Rds On - Drain-Source Resistance 45 mOhms Technology SiC Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 1.7 kV Vgs - Gate-Source Voltage - 5 V, + 15 V Vgs th - Gate-Source Threshold Voltage 2.7 V