- Part Number
- MTD8600N4-T
- Manufacturer
- Marktech Optoelectronics
- Categories
- Phototransistors
- RoHS
- Datasheet
- Description
- Phototransistors Photo Diode 880nm
MTD8600N4-T
Images are for reference only
Specifications
- Manufacturer
- Marktech Optoelectronics
- Categories
- Phototransistors
- Collector- Emitter Voltage VCEO Max
- 30 V
- Collector-Emitter Breakdown Voltage
- 30 V
- Collector-Emitter Saturation Voltage
- 200 mV
- Dark Current
- 100 nA
- Fall Time
- 10 us
- Maximum On-State Collector Current
- 50 mA
- Maximum Operating Temperature
- + 100 C
- Minimum Operating Temperature
- - 30 C
- Mounting Style
- Through Hole
- Package / Case
- TO-18-2
- Pd - Power Dissipation
- 250 mW
- Peak Wavelength
- 880 nm
- Rise Time
- 10 us
Porduct Category
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Latest Reviews
Thank You all fine, packed very well
Ulrich Bundke
Everything is excellent! recommend this seller!
Stoyan Chaykov
Shipped quickly, it was about 1 weeks in Krasnodar. Until the check operation, but to look at everything together
Sergio Garcia Carreon
Order is very quickly, before Moscow flew for 12 days! Many thanks to the seller!
Rasim Abdullayev
goods delivered was отслеживался very fast (башкирию 7 days) excellent дошло seller in excellent condition all recommend!!!!
Kathrin Leibfritz
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MTD8600N4-T News
03/14/2023
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